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PCFFS05120AF silicon carbide schottky diode 1200 v, 5 a semiconductor components industries, llc, 2016 publication order number: ? december 2016 rev. 1.0 PCFFS05120AF 1 www.onsemi.com electrical characteristics on wafer (note 2) t c = 25 o c unless otherwise noted notes: 1. based on to-247 package of on semiconductor 2. tested 100% on wafer symbol parameter test conditions min. typ. max. unit v r reverse blocking voltage i r = 200 ? a, t c = 25 o c 1200 - - v v f forward voltage i f = 5a, t c = 25 o c 1.20 - 1.75 v i r reverse current v r = 1200 v, t c = 25 o c - - 200 ? a PCFFS05120AF silicon carbide schottky diode ? 1200 v, 5 a features ? max junction temperature 175 o c ? avalanche rated 55 mj ? high surge current capacity ? positive temperature coefficient ? ease of paralleling ? no reverse recovery / no forward recovery applications ? general purpose ? smps, solar inverter, ups ? power switching circuits description silicon carbide (sic) schottky diodes use a completely new technology that provides super ior switching performance and higher reliability compared to sili con. no reverse recovery cur- rent, temperature dependent switching characteristics, and excellent thermal performance sets silicon carbide as the next generation of power semiconductor. system benefits include highest efficiency, faster operation frequency, increased power density, reduced emi, and reduced system size and cost. die information ? wafer diameter 6 inch ? die size 1,690 x 1,690 ? m (include scribe lane) ? metallization ? top ti / tin / ai 4 ? m ? back ti/ niv /ag ? die thickness typ. 200 ? m ? bonding pad size ? anode 1,110 ? 1,110 ? m ? recommended wire bond (note 1) ? anode 12mil ? 1 anode
PCFFS05120AF silicon carbide schottky diode 1200 v, 5 a www.onsemi.com 2 die layout (dimension: ? m, except scribe lane ) cross section the configuration of chips (based on 6 inch wafer) chip 80.0 ? m scribe lane chip chip chip 80.0 ? m scribe lane passivation information - passivation material: polymide (pspi) - pa ssivation type: local passivation - passivation thickness: 90ka pspi passivation line 1610 1610 sawn-on-film frame packing based on tested wafer
PCFFS05120AF silicon carbide schottky diode 1200 v, 5 a www.onsemi.com 3 absolute maximum ra tings on to-247 package t c = 25 c unless otherwise noted. electrical characteristi cs on to-247 package t c = 25 c unless otherwise noted. typical characteristics t j = 25 c unless otherwise noted. figure 1. forward charact eristics figure 2. reverse characteristics symbol parameter ratings unit v rrm peak repetitive reverse voltage 1200 v e as single pulse avalanche energy (note 3) 55 mj i f continuous rectified forward current @ t c < 148 c 5 a i f, m a x non-repetitive peak forward surge current t c = 25 c, 10 ? s 380 a t c = 150 c , 10 ? s 330 a i f, s m non-repetitive forward surge current half-sine pulse, t p = 8.3 ms 42 a i f, r m repetitive forward surge current half-sine pulse, t p = 8.3 ms 21 a t j , t stg operating and storage temperature range -55 to +175 c symbol parameter test conditions min. typ. max. unit v f forward voltage i f = 5 a, t c = 25 o c - 1.45 1.75 v i f = 5 a, t c = 125 o c-1.72 i f = 5 a, t c = 175 o c-22.4 i r reverse current v r = 1200 v, t c = 25 o c--200 ? a v r = 1200 v, t c = 125 o c--300 v r = 1200 v, t c = 175 o c--400 q c total capacitive charge v = 800 v - 37 - nc c total capacitance v r = 1 v, f = 100 khz - 337 - pf v r = 400 v, f = 100 khz - 33 - v r = 800 v, f = 100 khz - 26 - 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 2 4 6 8 10 t j = 175 o c t j = 125 o c t j = 75 o c t j = 25 o c t j = -55 o c i f , forward current (a) v f , forward voltage (v) 200 400 600 800 1000 1200 10 -3 10 -2 10 -1 10 0 10 1 i r , reverse current ( ? a) v r , reverse voltage (v) t j = 175 o c t j = 125 o c t j = -55 o c t j = 25 o c t j = 75 o c note 3: eas of 55 mj is based on starting t j = 25 c, l = 0.5 mh, i as = 15a, v = 150 v.
PCFFS05120AF silicon carbide schottky diode 1200 v, 5 a www.onsemi.com 4 figure 3. reverse characteristics figure 4. current derating figure 5. power derating figure 6. capacitive charge vs. reverse v oltage figure 7. capacitance vs. reverse voltage figure 8. capacitance stored energy 1000 1100 1200 1300 1400 0.0 0.2 0.4 0.6 0.8 1.0 t j = 175 o c t j = 125 o c t j = 75 o c t j = 25 o c t j = -55 o c i r , reverse current (ma) v r , reverse voltage (v) 25 50 75 100 125 150 175 0 20 40 60 80 100 d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 0.7 d = 1 i f , peak forward current (a) t c , case temperature ( o c ) 25 50 75 100 125 150 175 0 20 40 60 80 100 p tot , power dissipation (w) t c , case temperature ( o c ) 0 200 400 600 800 1000 0 10 20 30 40 50 q c , capacitive charge (nc) v r , reverse voltage (v) 0 200 400 600 800 1000 0 5 10 15 e c , capacitive energy ( ? j) v r , reverse voltage (v) 0.1 1 10 100 1000 10 100 1000 capacitance (pf) v r , reverse voltage (v)
on semiconductor and the on logo are trademar ks of semiconductor component s industries, llc dba on se miconductor or its subsidi aries in the united states and/or other countries. ? on semiconductor owns the rights to a number of patents, trademarks , copyrights, trade secrets, and other intellectual property . a listing of on semiconductor's product/ patent coverage may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. on semiconductor reserves the right to make changes without further notice to any pr oducts herein. on semiconductor makes no w arranty, representation or guarantee regarding the suitability of its products for any part icular purpose, nor does on semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitati on special, consequential or incidental damages. buyer is responsible for its products and applications using on semico nductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ? on semiconductor. ?typical? parameters whic h may be provided in on semic onductor data sheets and/or specifications can and do v ary in different applications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer's technical experts. on semiconductor does not convey a ny license under its patent rights nor the rights of others. on semiconductor products are not desi gned, intended, or authorized for use as a critical component in life support sys tems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or u se on semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries , affiliates, and di stributors harmles s against all claims, costs, damages, and e xpenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges th at on semiconductor was negligen t regarding the design or manufacture of the part. on semiconductor is an equal opportunity /affirmative action employer. this literature is subject to al l applicable copyright laws and is not for resale in any manner. PCFFS05120AF silicon carbide schottky diode 1200 v, 5 a www.onsemi.com 5
www. onsemi.com 1 on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent ? marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does o n semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typic als? must be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 www.onsemi.com literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative ? semiconductor components industries, llc
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